unisonic technologies co., ltd 8n65 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2012 unisonic technologies co., ltd qw-r502-591.c 8 a , 650v n-channel power mosfet ? description the utc 8n65 is a high voltage and high current power mosfet designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. this power mosfet is usually used in high speed switching applications at power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) = 1.4 ? @v gs = 10 v * ultra low gate charge ( typical 28 nc ) * low reverse transfer capacitance ( c rss = typical 12.0 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 8n65l-ta3-t 8n65g-ta3-t to-220 g d s tube 8n65l-tf1-t 8n65g-tf1-t to-220f1 g d s tube 8n65l-tf3-t 8n65g-tf3-t to-220f g d s tube 8n65l-t2q-t 8N65G-T2Q-T to-262 g d s tube note: pin assignment: g: gate d: drain s: source
8n65 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-591.c ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v avalanche current (note 2) i ar 8 a drain current continuous i d 8 a pulsed (note 2) i dm 32 a avalanche energy single pulsed (note 3) e as 230 mj repetitive (note 2) e ar 14.7 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation to-220/to-262 p d 147 w to-220f/to-220f1 48 w junction temperature t j +150 c operating temperature t opr -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those val ues beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l = 7.1mh, i as = 8a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 8a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case to-220/to-262 jc 0.85 c/w to-220f/to-220f1 2.6 c/w
8n65 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-591.c ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0 v, i d = 250 a 650 v drain-source leakage current i dss v ds = 650 v, v gs = 0 v 10 a gate-source leakage current forward i gss v gs = 30 v, v ds = 0 v 100 na reverse v gs = -30 v, v ds = 0 v -100 na breakdown voltage temperature coefficient bv dss / t j i d =250 a,referenced to 25c 0.7 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-source on-state resistance r ds ( on ) v gs = 10 v, i d = 4a 1.0 1.4 ? dynamic characteristics input capacitance c iss v ds = 25 v, v gs = 0v, f = 1mhz 965 1255 pf output capacitance c oss 105 135 pf reverse transfer capacitance c rss 12 16 pf switching characteristics turn-on delay time t d ( on ) v dd = 325v, i d =8a, r g = 25 ? (note 1, 2) 16.5 45 ns turn-on rise time t r 60.5 130 ns turn-off delay time t d ( off ) 81 170 ns turn-off fall time t f 64.5 140 ns total gate charge q g v ds = 520v,i d =8a, v gs = 10 v (note 1, 2) 28 36 nc gate-source charge q gs 4.5 nc gate-drain charge q gd 12 nc drain-source diode characteristics and maximum ratings drain-source diode forward voltage v sd v gs = 0 v, i s =8a 1.4 v maximum continuous drain-source diode forward current i s 8 a maximum pulsed drain-source diode forward current i sm 32 a reverse recovery time t rr v gs = 0 v, i s =8a, di f /dt = 100 a/s (note 2) 365 ns reverse recovery charge q rr 3.4 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
8n65 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-591.c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
8n65 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-591.c ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l v dd v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
8n65 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-591.c ? typical characteristics 10 1 10 0.1 1 drain-to-source voltage, v ds (v) drain current, i d (a) on-state characteristics 0.1 2 gate-source voltage, v gs (v) drain current, i d (a) transfer characteristics 46 810 10 1 0.1 5.0v notes: 1. 250s pulse test 2. t c =25c v gs top: 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5 v bottorm:5.0v 100 notes: 1. v ds =40v 2. 250s pulse test 25 c 150 c 0 0 drain-source on-resistance, r ds(on) (ohm) drain current, i d (a) 5 1 2 4 5 6 on-resistance variation vs. drain current and gate voltage 3 10 15 20 1 0.1 0.2 source-drain voltage, v sd (v) reverse drain current, i dr (a) body diode forward voltage vs. source current 1.8 0.4 0.6 0.8 1.0 1.2 1.6 1.4 10 150 c 25 c notes: 1. v gs =0v 2. 250s test v gs =20v v gs =10v t j =25c 1900 0 0.1 drain-sourcevoltage, v ds (v) capacitance (pf) 1700 500 110 1500 1300 capacitance characteristics (non-repetitive) 0 gate-source voltage, v gs (v) total gate charge, q g (nc) 5 15 25 8 10 12 10 6 4 2 0 v ds =120v v ds =520v v ds =300v 20 gate charge characteristics 700 c iss c oss c rss c iss= c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes: 1. v gs =0v 2. f = 1mhz 1100 900 300 100 30 i d =7.5a
8n65 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-591.c ? typical characteristics(cont.) -100 drain-source breakdown voltage, bv dss (normalized) junction temperature, t j ( c ) -50 50 200 100 150 1.2 0 1.1 1.0 0.9 0.8 note: 1. v gs =0v 2. i d =250a breakdown voltage variation vs. temperature -100 drain-source on-resistance, r ds(on) (normalized) junction temperature, t j ( c ) -50 50 200 100 150 3.0 0 2.0 1.0 0.5 0.0 1.5 2.5 on-resistance junction temperature note: 1. v gs =10v 2. i d =4a 10 1 0.1 drain-source voltage, v ds (v) drain current, i d (a) 100 10 1 100s 1000 10ms dc maximum safe operating area drain current, i d (a) case temperature, t c ( c ) 75 100 0 125 50 25 2 4 6 8 10 maximum drain current vs. case temperature notes: 1. t j =25c 2. t j =150c 3. single pulse 150 operation in this area is limited by r ds(on) 100 1ms 10s thermal response, jc (t) 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 square wave pulse duration, t 1 (sec) transient thermal response curve notes: 1. jc (t) = 0.85c/w max. 2. duty factor, d=t1/t2 3. t jm -t c =p dm jc (t) d=0.5 d=0.2 d=0.1 d=0.05 0.02 0.01 single pulse
8n65 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-591.c utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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